Paper Title:
Si Wafer Bonding: Structural Features of the Interface
  Abstract

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
85-90
DOI
10.4028/www.scientific.net/SSP.156-158.85
Citation
V.I. Vdovin, N.D. Zakharov, E. Pippel, P. Werner, M.G. Milvidskii, M. Ries , M. Seacrist, R. J. Falster, "Si Wafer Bonding: Structural Features of the Interface", Solid State Phenomena, Vols. 156-158, pp. 85-90, 2010
Online since
October 2009
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Price
$32.00
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