Si Wafer Bonding: Structural Features of the Interface |
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| Journal | Solid State Phenomena (Volumes 156 - 158) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by | M. Kittler and H. Richter |
| Pages | 85-90 |
| DOI | 10.4028/www.scientific.net/SSP.156-158.85 |
| Citation | V.I. Vdovin et al., 2009, Solid State Phenomena, 156-158, 85 |
| Online since | October, 2009 |
| Authors | V.I. Vdovin, N.D. Zakharov, Eckhard Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist, Robert J. Falster |
| Keywords | Dislocations, Oxide Layer Dissolution, Si Wafer Bonding |
| Abstract | Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle. |
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