Paper Title:
Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
  Abstract

Standard p-type 12 cm Cz Si wafers were implanted by helium ions. The implanted and nonimplanted samples were subsequently subjected to nitrogen plasma treatment and final vacuum annealing. SEM studies have shown the absence of large-scale defects on the top wafer surface and the presence of a layer revealing contrast with surrounding silicon on the cleavage surface at a depth corresponding to the projected range Rp. Scanning over a crater formed by ion sputtering has exposed no defects to the depth of Rp and beyond. At the same time, at a depth of Rp there is a layer with the morphology (structure) significantly different from the surrounding defect-free areas. The measurements of transverse conductivity have shown that the wafer with the formed nitrogen-contained layer possesses dielectric properties with a breakdown voltage up to 15 V.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
91-94
DOI
10.4028/www.scientific.net/SSP.156-158.91
Citation
N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, "Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing", Solid State Phenomena, Vols. 156-158, pp. 91-94, 2010
Online since
October 2009
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