Growth of Heavily Phosphorus-Doped (111) Silicon Crystals |
| Journal |
Solid State Phenomena (Volumes 156 - 158) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XIII |
| Edited by |
M. Kittler and H. Richter |
| Pages |
95-100 |
| DOI |
10.4028/www.scientific.net/SSP.156-158.95 |
| Citation |
Feng Liu et al., 2009, Solid State Phenomena, 156-158, 95 |
| Online since |
October, 2009 |
| Authors |
Feng Liu, Huan Peng Han, Yi Meng Wang, Li Ying Tong |
| Keywords |
Dislocation, Heavily P-Doped, Silicon Crystal |
| Full Paper |
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