HOME CONTACT My eBook

Username: Password:

> @scientific.net

Gettering and Defect Engineering in Semiconductor Technology XIII

Solid State Phenomena Volumes 156 - 158

• Papers
• Abstracts
• buy eBook

• p187 The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon   [ 184 K ]
  Authors: Charalamos A. Londos, A. Andrianakis, D. Aliprantis, Efstratia N. Sgourou, Valentin V. Emtsev, H. Ohyama
• p193 Numerical Analysis of mc-Si Crystal Growth   [ 463 K ]
  Authors: Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Bing Gao, X.J. Chen, Li Jun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa
• p199 Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates   [ 1007 K ]
  Authors: Hiroaki Kariyazaki, Tatsuhiko Aoki, Kouji Izunome, Koji Sueoka
• p205 Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects   [ 162 K ]
  Authors: F. Loix, Francois Dupret, A. de Potter, R. Rolinsky, N. Van den Bogaert, V. Regnier
• p211 Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon   [ 1 M ]
  Authors: G. Kissinger, J. Dabrowski, V.D. Akhmetov, Andreas Sattler, D. Kot, Wilfried von Ammon
• p217 Thermal Optimization of Cz Silicon Single Crystal Growth   [ 283 K ]
  Authors: A.I. Prostomolotov, N.A. Verezub, M.G. Milvidskii
• p223 Simulation of Iron Distribution after Crystallization of mc Silicon   [ 1 M ]
  Authors: Jonas Schön, Holger Habenicht, Martin C. Schubert, Wilhelm Warta
• p229 Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study   [ 2 M ]
  Authors: M.A. Falkenberg, D. Abdelbarey, Vitaly V. Kveder, Michael Seibt
• p235 Effect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo Simulation   [ 436 K ]
  Authors: A.G. Nastovjak, I.G. Neizvestny, Nataly Shwartz
• p241 Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors   [ 549 K ]
  Authors: N. Schüler, Torsten Hahn, Kay Dornich, J.R. Niklas
• p247 Simulation of XBIC Contrast of Precipitates in Si   [ 149 K ]
  Authors: Eugene B. Yakimov
• p251 Dislocation Nucleation in Heteroepitaxial Semiconducting Films   [ 4 M ]
  Authors: Bernard Pichaud, N. Burle, Michael Texier, C. Fontaine, V.I. Vdovin
• p261 Impurity Engineering of Czochralski Silicon   [ 968 K ]
  Authors: Jia He Chen, Xiang Yang Ma, De Ren Yang
• p269 The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage   [ 1 M ]
  Authors: Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza
• p275 Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening   [ 568 K ]
  Authors: Xiang Yang Ma, Yan Feng, Yu Heng Zeng, De Ren Yang