Paper Title
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Authors: Eugene B. Yakimov
Abstract:Simulation of contrast for small spherical defects in the X-ray beam-induced current (XBIC) mode has been carried out. Under simulations the...
247
Authors: Bernard Pichaud, N. Burle, Michael Texier, C. Fontaine, V.I. Vdovin
Abstract:The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this...
251
Authors: Jia He Chen, Xiang Yang Ma, De Ren Yang
Abstract:The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping...
261
Authors: Isabella Mica, Maria Luisa Polignano, F. Cazzaniga, L. Di Piazza, M. Mariani, E. Ricci, F. Sammiceli, S. Speranza
Abstract:The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at...
269
Authors: Xiang Yang Ma, Yan Feng, Yu Heng Zeng, De Ren Yang
Abstract:Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to...
275
Authors: V.G. Litovchenko, I.P. Lisovskyy, M. Voitovych, Andrey V. Sarikov, S.O. Zlobin, V.P. Kladko, V. Machulin
Abstract:In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of...
279
Authors: Maxim Trushin, O.F. Vyvenko, Teimuraz Mchedlidze, Oleg Kononchuk, Martin Kittler
Abstract:The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented....
283
Authors: S. Shevchenko, A.N. Tereshchenko
Abstract:We used the DLTS and photoluminescence (PL) techniques to study the deep states due to dislocations and deformation-induced point defects...
289
Authors: Nikolai Yarykin, Nikolay V. Abrosimov
Abstract:The IR absorption spectra and kinetics of the oxygen solid solution decay were studied in the Si1¡xGex crystals (0 · x · 0:055) plastically...
295
Authors: Vladimir P. Markevich, Anthony R. Peaker, Stanislav B. Lastovskii, Vasilii E. Gusakov, I.F. Medvedeva, L.I. Murin
Abstract:Defects induced in silicon crystals by irradiations with 6 MeV electrons in the temperature range 60 to 500 oC have been studied by means of...
299
Showing 41 to 50 of 95 Paper Titles