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Gettering and Defect Engineering in Semiconductor Technology XIII

Solid State Phenomena Volumes 156 - 158

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• p555 Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle.   [ 750 K ]
  Authors: E.A. Steinman, Oleg Kononchuk, A.N. Tereshchenko, A.A. Mazilkin
• p561 D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si   [ 852 K ]
  Authors: Takashi Sekiguchi, Woong Lee, Jun Chen, Bin Chen
• p567 Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks   [ 342 K ]
  Authors: Teimuraz Mchedlidze, Oleg Kononchuk, Tzanimir Arguirov, Maxim Trushin, Manfred Reiche, Martin Kittler
• p573 Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence   [ 2 M ]
  Authors: N.A. Sobolev, Kalyadin, R.N. Kyutt, Elena I. Shek, V.I. Vdovin
• p579 Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing   [ 249 K ]
  Authors: Tzanimir Arguirov, Teimuraz Mchedlidze, Manfred Reiche, Martin Kittler