Paper Title:
Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films
  Abstract

Thin SiOx films deposited by reactive r.f. magnetron sputtering of Si at partial pressure ratios R between oxygen and argon in the range 15%-0.03% are studied. X-ray photoelectron spectroscopy and Variable angle spectroscopic ellipsometry prove enrichment with Si of the layers deposited at R < 0.5 %. Ellipsometric data give information about the refractive index and extinction coefficient of the films. Atomic Force Microscopy results show that for all samples high temperature annealing at 1000oC leads to a decrease of the surface roughness.

  Info
Periodical
Solid State Phenomena (Volume 159)
Edited by
Lilyana Kolakieva and Roumen Kakanakov
Pages
101-104
DOI
10.4028/www.scientific.net/SSP.159.101
Citation
E. Manolov, M. Curiel, N. Nedev, D. Nesheva, J. Terrazas, B. Valdez, R. Machorro, J. Soares, M. R. Sardela, "Influence of Thermal Annealing on the Properties of Sputtered Si Rich Silicon Oxide Films", Solid State Phenomena, Vol. 159, pp. 101-104, 2010
Online since
January 2010
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