Paper Title:
Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon
  Abstract

In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

  Info
Periodical
Solid State Phenomena (Volume 159)
Edited by
Lilyana Kolakieva and Roumen Kakanakov
Pages
163-166
DOI
10.4028/www.scientific.net/SSP.159.163
Citation
S. Alexandrova, A. Szekeres, "Thickness-Dependent Interface Parameters of Silicon Oxide Films Grown on Plasma Hydrogenated Silicon", Solid State Phenomena, Vol. 159, pp. 163-166, 2010
Online since
January 2010
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