Paper Title:
Some Recent Results on the 3C-SiC Structural Defects
  Abstract

This work presents some recent results on the 3C-SiC structural defects, studied by Transmission Electron Microscopy (TEM). The samples studied were grown in several laboratories, using different methods. Commonly used methods for growth are Sublimation Epitaxy (SE), Physical Vapour Transport (PVT), Continuous Feed Physical Vapour Transport (CF-PVT), Chemical Vapour Deposition (CVD), and Liquid Phase Epitaxy (LPE). In all these methods, for both bulk and epitaxial layer growth, substrates from other polytypes are exploited like the common hexagonal polytypes 4H- and 6H-SiC or 3C-SiC seeds both in (111) and (100) orientation.

  Info
Periodical
Solid State Phenomena (Volume 159)
Edited by
Lilyana Kolakieva and Roumen Kakanakov
Pages
39-48
DOI
10.4028/www.scientific.net/SSP.159.39
Citation
M. Marinova, A. Mantzari, E. K. Polychroniadis, "Some Recent Results on the 3C-SiC Structural Defects", Solid State Phenomena, Vol. 159, pp. 39-48, 2010
Online since
January 2010
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$32.00
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