Paper Title:
Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices
  Abstract

The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.

  Info
Periodical
Solid State Phenomena (Volumes 168-169)
Main Theme
Edited by
V. Ustinov
Pages
23-26
DOI
10.4028/www.scientific.net/SSP.168-169.23
Citation
L.V. Lutsev, A.I. Stognij, N.N. Novitskii, A.S. Shulenkov, "Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices", Solid State Phenomena, Vols. 168-169, pp. 23-26, 2011
Online since
December 2010
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