Paper Title:
Giant Magnetoresistance in Magnetic Nanostructures and Spintronic Devices
| Periodical | Solid State Phenomena (Volumes 168 - 169) |
|---|---|
| Main Theme | Trends in Magnetism |
| Edited by | V. Ustinov |
| Pages | 23-26 |
| DOI | 10.4028/www.scientific.net/SSP.168-169.23 |
| Citation | L.V. Lutsev et al., 2010, Solid State Phenomena, 168-169, 23 |
| Online since | December, 2010 |
| Authors | L.V. Lutsev, A.I. Stognij, N.N. Novitskii, A.S. Shulenkov |
| Keywords | Avalanche Process, Cobalt Nanoparticle, Granular Film Heterostructures, Magnetic Sensitive Field-Effect Transistors, Magnetic Sensor, Magnetoresistivity MR, Semiconductor Film Heterostructures, Spin-Dependent Potential Barrier |
| Price | US$ 28,- |
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Abstract
The injection magnetoresistance effect in SiO2(Co)/GaAs heterostructures, where SiO2(Co) is a granular SiO2 film containing Co nanoparticles, has been studied. This effect manifests itself in the avalanche breakdown mode and has extremely large values at room temperature due to the spin-dependent potential barrier. We consider application of the IMR effect and SiO2(Co)/GaAs heterostructures in spintronic devices – high sensitive magnetic sensors and field-effect transistors governed by applied magnetic field.
