Paper Title:
Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition
  Abstract

Laser deposition method was used for growing ferromagnetic semiconductor and half-metal compound layers. GaMnAs and InMnAs layers were grown by alternating laser ablation of solid targets (semiconductor and Mn) in hydrogen and arsine flow. The layers exhibited ferromagnetic properties (detected by Hall effect measurements) from 10 K to room temperature (for InMnAs). Half-metal compound layers were deposited by the techniques of reactive laser deposition (MnAs, MnP) and alternating laser deposition (MnSb). The half-metal layers exhibit ferromagnetism at temperatures up to 300 K.

  Info
Periodical
Solid State Phenomena (Volumes 168-169)
Main Theme
Edited by
V. Ustinov
Pages
245-248
DOI
10.4028/www.scientific.net/SSP.168-169.245
Citation
Y.A. Danilov, A. V. Kudrin, O.V. Vikhrova, B.N. Zvonkov, "Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition", Solid State Phenomena, Vols. 168-169, pp. 245-248, 2011
Online since
December 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: V.A. Kulbachinskii, Leonid N. Oveshnikov, Boris A. Aronzon
Chapter 2: Magnetic Semiconductors and Oxides
Abstract:Transport, magnetotransport and magnetic properties of structures GaAs/InAs/GaAs with a InAs quantum dot (QD) layer have been investigated in...
93
Authors: Elena A. Gan’shina, L.L. Golik, Z.E. Kun’kova, Vitaly I. Kovalev, Yury V. Markin, Andrey I. Novikov, Georgy S. Zykov, Yury A. Danilov, Alexei V. Kudrin, O.V. Vikhrova, B.N. Zvonkov
Chapter 2: Magnetic Semiconductors and Oxides
Abstract:GaMnAs layers fabricated on GaAs(001) substrates by laser ablation technique were studied using the magneto-optical transversal Kerr effect...
101