Paper Title:
Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2
  Abstract

The heterostructure ferromagnetic/semiconductor ZnSiAs2/Si was obtained by using the Si-ZnAs2 phase diagram. The magnetic properties of Zn1-XMnXSiAs2 bulk crystals and ferromagnetic layered heterostructures were similar. The same method was used for preparing a ferromagnetic layer ZnGeAs2 on a germanium substrate.

  Info
Periodical
Solid State Phenomena (Volumes 168-169)
Main Theme
Edited by
V. Ustinov
Pages
313-316
DOI
10.4028/www.scientific.net/SSP.168-169.313
Citation
I.V. Fedorchenko, A. Rumiantsev, T. Kuprijanova, L. Kilanski, R.A. Szymczak, W. Dobrowolski, L.A. Koroleva, "Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2", Solid State Phenomena, Vols. 168-169, pp. 313-316, 2011
Online since
December 2010
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