On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers |
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| Journal | Solid State Phenomena (Volumes 168 - 169) |
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| Volume | Trends in Magnetism |
| Edited by | V. Ustinov |
| Pages | 35-38 |
| DOI | 10.4028/www.scientific.net/SSP.168-169.35 |
| Citation | E.A. Gan'shina et al., 2010, Solid State Phenomena, 168-169, 35 |
| Online since | December, 2010 |
| Authors | E.A. Gan'shina, L.L. Golik, V.I. Kovalev, Z.E. Kun’kova, M.P. Temiryazeva, Y.A. Danilov, O.V. Vikhrova, B.N. Zvonkov, A.D. Rubacheva, P.N. Tcherbak, A.N. Vinogradov |
| Keywords | GaMnAs, InMnAs, Magnetic Semiconductor, Nanocluster, Plasmons, Spectral Ellipsometry, Transversal Kerr Effect |
| Abstract | Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host. |
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