Quantum Amplifier with Spin-Polarized Electrons Injection
| Periodical | Solid State Phenomena (Volumes 168 - 169) |
|---|---|
| Main Theme | Trends in Magnetism |
| Edited by | V. Ustinov |
| Pages | 43-46 |
| DOI | 10.4028/www.scientific.net/SSP.168-169.43 |
| Citation | N.A. Viglin et al., 2010, Solid State Phenomena, 168-169, 43 |
| Online since | December, 2010 |
| Authors | N.A. Viglin, V.V. Ustinov, T.N. Pavlov, V.M. Tsvelihovskaya |
| Keywords | Maser, Quantum Amplifier, Spin-Polarized Electrons |
| Price | US$ 28,- |
A promising idea to use the transport of spin-polarized conduction electrons in a magnetic hetero-structure in order to invert population of the charge-carrier spin level in one of its layers, aiming at creation of an active environment for the electromagnetic radiation amplification, has been realized in a number of FMС/SC structures in which FMС is a ferromagnetic conductor and SC is a semiconductor. The n-InSb single crystals, featured by a high mobility of charge carriers, narrow ESR line, and anomalously high absolute value of the negative g-factor (g = −52), were used as SC. The following materials were used as FMC playing a role of spin polarizer: (i) ferromagnetic semiconductors EuO0.98Gd0.02O and HgCr2Se4, (ii) Geisler alloys Co2MnSn, Ni2MnSn and Co2MnSb. We have demonstrated that the spin-polarized electrons injection into the n-InSb semiconductor from the above-mentioned ferromagnetic materials results in a generation of the laser-type electromagnetic radiation.
