Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Zvonkov, B.N.; Drozdov , Y.N.; Danilov, Y.A.; Dorokhin, M.V.; Kulakovskii, V.D.; Prokof’eva, M.M.; Zaitsev, S.V.

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On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers, p.35
Variation of Electroresistive Properties of Nanocrystalline Nd_0.7Sr_0.3MnO₃ by Thermobaric Treatment under a Pressure of 9 GPa, p.39
Quantum Amplifier with Spin-Polarized Electrons Injection, p.43
Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms, p.47
Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors, p.55
Nonlinear Spin Dynamics in Magnetic Mesostructures Induced by Spin Polarized Autoemission, p.61
Collective Magnetic Moment Relaxation in an Assembly of Ferromagnetic Nanoparticles, p.65
Ferromagnetic and Spin-Wave Resonance in Exchange-Coupled NiFe/Ag/NiFe Three-Layer Structures, p.69
Spin-Wave Resonance in Multilayer Films, p.73

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Paper Title:

Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors

Periodical	Solid State Phenomena (Volumes 168 - 169)
Main Theme	Trends in Magnetism
Edited by	V. Ustinov
Pages	55-58
DOI	10.4028/www.scientific.net/SSP.168-169.55
Citation	Y.A. Danilov et al., 2010, Solid State Phenomena, 168-169, 55
Online since	December, 2010
Authors	Y.A. Danilov, Y.N. Drozdov, M.V. Dorokhin, V.D. Kulakovskii, M.M. Prokof’eva, S.V. Zaitsev, B.N. Zvonkov
Keywords	Circular Polarization Degree, Delta-Doped Layer, Electroluminescence, Exchange Interaction, Schottky Diode
Price	US$ 28,-

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Abstract

Circularly polarized electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures with adjacent ferromagnetic delta-doped layer has been investigated. It was found that delta-layer placed near (at 2-10 nm) the quantum well (QW) causes circular polarization of its electroluminescence due to an s,p-d exchange interaction between holes in the quantum well and Mn ions in the delta-layer. The dependence of circular polarization degree on main technology parameters is discussed.