Paper Title:
Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au
  Abstract

The optical anisotropy properties of rhenium disulphide (ReS2) and Au-doped rhenium disulphide (ReS2:Au) have been investigated by polarization-dependent photoluminescence (PL). Because the excitonic transitions show strong polarization dependences in the near-infrared region, we used polarization-dependent PL measurements in the range between 0° and 180° to characterize the unique polarization property of ReS2 and ReS2:Au, and identify the origin of the excitonic transitions. It was observed that the variation in the amplitude of PL excitonic transitions with different polarization characteristics follows the Malus rule. In comparison with the undoped ReS2, the PL spectra of Au-doped sample show not only the main excitonic transitions near the direct band edge but also some extra transitions owing to the doping effects.

  Info
Periodical
Solid State Phenomena (Volume 170)
Edited by
J.-L. Bobet, B. Chevalier and D. Fruchart
Pages
135-138
DOI
10.4028/www.scientific.net/SSP.170.135
Citation
D. Y. Lin, T. P. Huang, F. L. Wu, C. M. Lin, Y. S. Huang, K. K. Tiong, "Anisotropy of Photoluminescence in Layered Semiconductors ReS2 and ReS2:Au", Solid State Phenomena, Vol. 170, pp. 135-138, 2011
Online since
April 2011
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