Paper Title:
Optical Characterization of Electronic Structure of CuInS2 and CuAlS2 Chalcopyrite Crystals
  Abstract

Electronic structure of solar-energy related crystals of CuInS2 and CuAlS2 has been characterized using thermoreflectance (TR) measurement in the energy range between 1.25 and 6 eV. The TR measurements were carried out at room (~300 K, RT) and low (~30 K, LT) temperatures. A lot of interband transition features including band-edge excitons and higher-lying interband transitions were simultaneously detected in the low-temperature TR spectra of CuInS2 and CuAlS2. The energies of band-edge excitonic transitions at LT (RT) were analysed and determined to be =1.545 (1.535) and =1.554 eV (1.545 eV) for CuInS2, and =3.514 (3.486), =3.549 (3.522), and =3.666 eV (3.64 eV) for CuAlS2, respectively. The band-edge transitions of the and excitons are originated from the sulfur pp transitions in CuInS2 and CuAlS2 separated by crystal-field splitting. Several high-lying interband transitions were detected in the TR spectra of CuInS2 and CuAlS2 at LT and RT. Transition origins for the high-lying interband transitions are evaluated. The dependence of electronic band structure in between the CuInS2 and CuAlS2 is analysed and discussed.

  Info
Periodical
Solid State Phenomena (Volume 170)
Edited by
J.-L. Bobet, B. Chevalier and D. Fruchart
Pages
21-24
DOI
10.4028/www.scientific.net/SSP.170.21
Citation
C. H. Ho, S. F. Lo, P. C. Chi, C. C. Wu, Y. S. Huang, K. K. Tiong, "Optical Characterization of Electronic Structure of CuInS2 and CuAlS2 Chalcopyrite Crystals", Solid State Phenomena, Vol. 170, pp. 21-24, 2011
Online since
April 2011
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