Paper Title:
Heteroepitaxy Crystallography in Low Dimensional Nanostructures
  Abstract

Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.

  Info
Periodical
Solid State Phenomena (Volumes 172-174)
Edited by
Yves Bréchet, Emmanuel Clouet, Alexis Deschamps, Alphonse Finel and Frédéric Soisson
Pages
1307-1312
DOI
10.4028/www.scientific.net/SSP.172-174.1307
Citation
D. Qiu, M. X. Zhang, P. Kelly, "Heteroepitaxy Crystallography in Low Dimensional Nanostructures", Solid State Phenomena, Vols. 172-174, pp. 1307-1312, 2011
Online since
June 2011
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Price
$32.00
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