Paper Title:
Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques
  Abstract

The formation of metal (Ni and Pd) silicide thin films on a Si wafer is analyzed using differential scanning calorimetry (DSC) and isothermal X ray diffraction measurements. The sensitivity of DSC is remarkable even in this experimental Ni/Si and Pd/Si(001) and allows to show two steps of growth for a phase formation (lateral and normal growth). This technique is shown being of main interest for characterization of silicide formation during microelectronic industrial processes. Combining X-ray diffraction measurements and DSC measurements, the interface mobilities and the effective diffusion coefficient characterizing Ni2Si and Pd2Si growth are measured. These quantities as well as the interface mobilility for lateral growth have been determined by using a model taken into account the nucleation and lateral growth as well as a normal growth controlled by diffusion and interface reaction.

  Info
Periodical
Solid State Phenomena (Volumes 172-174)
Edited by
Yves Bréchet, Emmanuel Clouet, Alexis Deschamps, Alphonse Finel and Frédéric Soisson
Pages
640-645
DOI
10.4028/www.scientific.net/SSP.172-174.640
Citation
K. Hoummada, D. Mangelinck, A. Portavoce, "Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques", Solid State Phenomena, Vols. 172-174, pp. 640-645, 2011
Online since
June 2011
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