Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon
| Periodical | Solid State Phenomena (Volume 175) |
|---|---|
| Main Theme | Application of Diamond and Related Materials |
| Edited by | Xipeng Xu |
| Pages | 72-76 |
| DOI | 10.4028/www.scientific.net/SSP.175.72 |
| Citation | Yu Fei Gao et al., 2011, Solid State Phenomena, 175, 72 |
| Online since | June, 2011 |
| Authors | Yu Fei Gao, Pei Qi Ge |
| Keywords | Grit Cut Depth, Process Parameter, Single Crystal Silicon, Wire Saw |
| Price | US$ 28,- |
A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.