Paper Title:
Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond
  Abstract

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

  Info
Periodical
Solid State Phenomena (Volume 175)
Edited by
Xipeng Xu
Pages
82-86
DOI
10.4028/www.scientific.net/SSP.175.82
Citation
Z. Chen, X. Wei, X. Z. Xie, Q. L. Ren, "Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond", Solid State Phenomena, Vol. 175, pp. 82-86, 2011
Online since
June 2011
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