Paper Title:
Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy
  Abstract

Thin crystalline silicon films on glass substrate, fabricated using solid phase crystallization for application in thin-film solar cells, were investigated by deep level transient spectroscopy (DLTS). The analyses of the DLTS spectra obtained during temperature scans revealed presence of carrier traps related to dislocations in silicon. Other carrier traps of yet unknown nature were detected as well. Variations of electrical activity of the traps were achieved applying variations in the process of the film formation. These changes were also detected during DLTS measurements, suggesting a possibility for applying of DLTS for the investigation and characterization of the thin-film Si material on glass.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 3: Crystalline Silicon for Solar Cells
Edited by
W. Jantsch and F. Schäffler
Pages
100-105
DOI
10.4028/www.scientific.net/SSP.178-179.100
Citation
T. Mchedlidze, J. H. Zollondz, M. Kittler, "Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy", Solid State Phenomena, Vols. 178-179, pp. 100-105, 2011
Online since
August 2011
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Price
$32.00
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