Paper Title:
Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel
  Abstract

Graphene films were grown on thin polycrystalline Ni using a buried amorphous carbon (a-C) layer as C source. Rapid thermal processes (RTP) at temperatures from 600 to 800°C were used to promote C diffusion into Ni and its subsequent segregation on Ni surface, during the sample cool down. RTP at 800°C was the optimal condition for graphene film formation. Micro-Raman spectroscopy showed that the grown film is mostly composed by multilayers of graphene. Atomic force microscopy showed that the film presents peculiar corrugations (wrinkles), isotropically oriented and with heights ranging from from ~1 to ~15 nm. Selected area diffraction by transmission electron microscopy on the MLG membranes shows a rotational disorder between the stacked graphene layers.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 4: Co-Integration of Si and Ge, III-V, Graphenes, Organo-Silica Devices
Edited by
W. Jantsch and F. Schäffler
Pages
125-129
DOI
10.4028/www.scientific.net/SSP.178-179.125
Citation
V. Raineri, C. Bongiorno, S. Di Franco, R. Lo Nigro, E. Rimini, F. Giannazzo, "Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel", Solid State Phenomena, Vols. 178-179, pp. 125-129, 2011
Online since
August 2011
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Price
$32.00
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