Paper Title:
Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
  Abstract

Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 5: Point Defects in Si
Edited by
W. Jantsch and F. Schäffler
Pages
154-157
DOI
10.4028/www.scientific.net/SSP.178-179.154
Citation
N. Yarykin, J. Weber, "Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon", Solid State Phenomena, Vols. 178-179, pp. 154-157, 2011
Online since
August 2011
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Price
$32.00
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