Paper Title:
1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
  Abstract

Silicon wafers with different carbon contents have been characterized by Fourier transform infrared spectroscopy technique. An infrared absorption band at 1207cm-1 can be newly observed in the case of carbon content being above 1.7×1017/cm3, whose intensity increases with an increase of carbon concentration in silicon crystal. More interestingly, the 1207cm-1 band cannot be influenced by the long-time annealing in the temperature range of 450-1250oC, suggesting the high thermal stability of this carbon-related defect, which might be related to the presence of silicon carbide in silicon crystals.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 5: Point Defects in Si
Edited by
W. Jantsch and F. Schäffler
Pages
172-177
DOI
10.4028/www.scientific.net/SSP.178-179.172
Citation
L. Chen, X. G. Yu, P. Chen, X. Gu, J. G. Lu, D. R. Yang, "1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal", Solid State Phenomena, Vols. 178-179, pp. 172-177, 2011
Online since
August 2011
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Price
$32.00
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