Paper Title:
Boron-Oxygen-Related Defect in Silicon
  Abstract

In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect to which found band corresponds. It was revealed that defect occurs also during thermal treatments of silicon without illumination when a weak current was applied to the sample upon the treatment. The assumption was made that the formation of defect occurs both as result of direct interaction of components and through intermediate metastable states.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 5: Point Defects in Si
Edited by
W. Jantsch and F. Schäffler
Pages
178-182
DOI
10.4028/www.scientific.net/SSP.178-179.178
Citation
L. I. Khirunenko, Y. V. Pomozov, M. G. Sosnin, A.V. Duvanskii, "Boron-Oxygen-Related Defect in Silicon", Solid State Phenomena, Vols. 178-179, pp. 178-182, 2011
Online since
August 2011
Export
Price
$32.00
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