Paper Title:
Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
  Abstract

High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show that most defects are amorphous oxygen precipitates and/or dislocations. Ham’s theory has been modified in order to take into account the variations of interstitial oxygen concentration during the formation of precipitates. Comparison between experimental data and simulation shows that the specificity of annealing cycle is to combine both nucleation and growth stages. The morphology and stoechiometry of SiOx precipitates are also studied.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 5: Point Defects in Si
Edited by
W. Jantsch and F. Schäffler
Pages
188-191
DOI
10.4028/www.scientific.net/SSP.178-179.188
Citation
J. Nicolai, N. Burle, B. Pichaud, "Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation", Solid State Phenomena, Vols. 178-179, pp. 188-191, 2011
Online since
August 2011
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Price
$32.00
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