Paper Title:
Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
  Abstract

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 5: Point Defects in Si
Edited by
W. Jantsch and F. Schäffler
Pages
192-197
DOI
10.4028/www.scientific.net/SSP.178-179.192
Citation
H. Malmbekk, L. Vines, E. V. Monakhov, B. G. Svensson, "Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon", Solid State Phenomena, Vols. 178-179, pp. 192-197, 2011
Online since
August 2011
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Price
$32.00
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