Paper Title:
Formation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal Annealing
  Abstract

There are investigated the structural properties of 64Zn+ ion-beam induced nano-size voids in as implanted and subsequent furnace annealing SiOSuperscript text2/Si(100) substrates. Then 64Zn+ ions with energy of E=100keV were implanted into SiO2 layer to a fluence of D=2×1014cm-2. After this furnace thermal annealing at temperature 400°C during 1h in neutral (nitrogen) atmosthere was made. It is revealed, that in as-implanted sample the surface is non-uniform and there is some structurization of a SiO2 layer. In this state, metal Zn NPs an order of ten nm in diameter are formed in the depth region around the projected range. There is thus a net flux of Zn out of the nanoparticles (NPs) into an oxide layer closer to the surface. As Zn has a big diffusion constant and a high vaper pressure there are occured out-diffusion of Zn from a SiO2 surface layer. The volume occupied by the Zn NPs becomes a void. It results to formation of cavities, which combining among themselves, form voids.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 6: Extended Defects
Edited by
W. Jantsch and F. Schäffler
Pages
217-220
DOI
10.4028/www.scientific.net/SSP.178-179.217
Citation
V. V. Privezentsev, P. N. Chernykh, D. V. Petrov, "Formation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal Annealing", Solid State Phenomena, Vols. 178-179, pp. 217-220, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625