XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source |
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| Journal | Solid State Phenomena (Volumes 178 - 179) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XIV |
| Edited by | W. Jantsch and F. Schäffler |
| Pages | 226-229 |
| DOI | 10.4028/www.scientific.net/SSP.178-179.226 |
| Citation | Rashid R. Fahrtdinov et al., 2011, Solid State Phenomena, 178-179, 226 |
| Online since | August, 2011 |
| Authors | Rashid R. Fahrtdinov, Olga V. Feklisova, Maxim V. Grigoriev, Dmitry V. Irzhak, Dmitry V. Roshchupkin, Eugene B. Yakimov |
| Keywords | Contrast, EBIC, Grain Boundary, Iron Contamination, Si, Simulation, XBIC |
| Abstract | It is shown that the X-ray beam induced current method (XBIC) can be realized at the laboratory X-ray source using the polycapillary x-ray optics. The images of iron contaminated grain boundaries in multicrystalline Si are obtained. It is shown that the grain boundary XBIC contrast is 2-3 times smaller than the EBIC one. A simulation of XBIC and EBIC contrast values for two-dimensional defects is carried out and a good correlation between the experimental and calculated values is obtained. The dependence of grain boundary XBIC contrast on the X-ray beam width is calculated. |
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