Paper Title:
Analysis of Contaminated Oxide-Silicon Interfaces
  Abstract

Methods for the analysis of the oxide-silicon interface were compared for their ability to reveal metal segregation at the interface and organic contamination. The impact of these contaminations on surface recombination velocity measurements, on capacitance vs. voltage, conductance vs. voltage and capacitance vs. time measurements and on MOS-DLTS spectra was studied. Niobium-contaminated wafers were used as an example of metal surface segregation, because it was previously shown that niobium is prone to surface segregation. Interface state density measurements obtained by the conductance method showed a limited impact of niobium implantation. Vice versa significant effects were found in MOS-DLTS spectra. For what concerns organic contamination, MOS-DLTS showed the most significant effects from the point-of-view of the intrinsic properties of the silicon oxide - silicon interface, and GOI tests demonstrate a clear impact of the organic contamination on MOS capacitors oxide breakdown events.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 7: Defects and Interfaces
Edited by
W. Jantsch and F. Schäffler
Pages
243-248
DOI
10.4028/www.scientific.net/SSP.178-179.243
Citation
M. L. Polignano, D. Codegoni, L. Castellano, S. Greco, G. Borionetti, F. Bonoli, A. Nutsch, R. Altmann, A. Liebold, M. Otto, P. Monge, C. Riva, "Analysis of Contaminated Oxide-Silicon Interfaces", Solid State Phenomena, Vols. 178-179, pp. 243-248, 2011
Online since
August 2011
Export
Price
$32.00
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