Paper Title:
Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
  Abstract

Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 7: Defects and Interfaces
Edited by
W. Jantsch and F. Schäffler
Pages
253-258
DOI
10.4028/www.scientific.net/SSP.178-179.253
Citation
V. Vdovin, O. Vyvenko, E. Ubyivovk, O. Kononchuk, "Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers", Solid State Phenomena, Vols. 178-179, pp. 253-258, 2011
Online since
August 2011
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Price
$32.00
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