Paper Title:
Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties
  Abstract

The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 7: Defects and Interfaces
Edited by
W. Jantsch and F. Schäffler
Pages
259-262
DOI
10.4028/www.scientific.net/SSP.178-179.259
Citation
D. Kropman, E. Mellikov, T. Kärner, T. Laas, A. Medvid, P. Onufrijevs, E. Dauksta, "Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties", Solid State Phenomena, Vols. 178-179, pp. 259-262, 2011
Online since
August 2011
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Price
$32.00
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