Paper Title:
Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties
  Abstract

The results of an investigation of the point defects (PD) generation, redistribution and interaction with impurities in the Si-SiO2 system during the process of its formation in use of of electron paramagnetic resonance (EPR) and nuclear magnetic resonance (NMR) spectra are presented. The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation conditions: temperature, cooling rate, oxidation time and impurity content. The difference between interface properties of n- and p-type wafers could be related to different Fermi level position at the interface and to different PD densities in volume.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 7: Defects and Interfaces
Edited by
W. Jantsch and F. Schäffler
Pages
263-266
DOI
10.4028/www.scientific.net/SSP.178-179.263
Citation
D. Kropman, E. Mellikov, T. Kärner, I. Heinmaa, T. Laas, C. A. Londos, A. Misiuk, "Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties", Solid State Phenomena, Vols. 178-179, pp. 263-266, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
Abstract:The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays...
65
Authors: Daniel Kropman, E. Mellikov, K. Lott, Tiit Kärner, Ivo Heinmaa, Tony Laas, Arthur Medvid, Wolfgang Skorupa, S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov, J. Woznitsa
Abstract:The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its...
145
Authors: Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Charalamos A. Londos
Abstract:It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical...
102
Authors: Sethu Saveda Suvanam, Milad Ghadami Yazdi, Muhammad Usman, Mats Götelid, Anders Hallén
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:In this paper, the interface between Al2O3 and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS)...
693