Paper Title:
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
  Abstract

The interface state density profile for an unstressed transistor has been carefully extracted. The experimental evidence of profile non-uniformity is presented. A scheme to separate the bulk oxide trap contribution from the total charge pumping current is suggested as an improvement to the conventional extraction procedure. The obtained information is of high importance in the context of hot-carrier degradation modeling in order to allow for a more detailed verification of the model.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 7: Defects and Interfaces
Edited by
W. Jantsch and F. Schäffler
Pages
267-272
DOI
10.4028/www.scientific.net/SSP.178-179.267
Citation
I. Starkov, S. Tyaginov, H. Enichlmair, J. M. Park, H. Ceric, T. Grasser, "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements", Solid State Phenomena, Vols. 178-179, pp. 267-272, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: In Ho Kang, Wook Bahng, Sung Jae Joo, Sang Cheol Kim, Nam Kyun Kim
Abstract:The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were...
663
Authors: Xin Zhong Wang, Guang Hui Yu, Shi Guo Li, Cheng Guo Wu
Abstract:We present a novel method to fabricate uniform GaN nanocone arrays (GNA) using Nickel-nanoisland masks. The nanoscale conelike arrays with...
2514
Authors: Tamara Rudenko, Sylvain Barraud, Yordan M. Georgiev, Vladimir Lysenko, Alexey Nazarov
Chapter 1: Low-Power Electronics and Spintronics
Abstract:This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold...
17