Paper Title:
Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
  Abstract

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
275-284
DOI
10.4028/www.scientific.net/SSP.178-179.275
Citation
M. Seibt, P. Saring, P. Hahne, L. Stolze, M.A. Falkenberg, C. Rudolf, D. Abdelbarey, H. Schuhmann, "Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon", Solid State Phenomena, Vols. 178-179, pp. 275-284, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M.V. Trushin, O.F. Vyvenko, Michael Seibt
Abstract:Minority carrier diffusion lengths were measured for the set of n- and p-type silicon samples with NiSi2 precipitates of different...
155
Authors: De Ning Zou, Yan Zhang, Ying Han, Wei Zhang
Abstract:In order to keep the steel with outstanding antibacterial characteristics, the relationship between the anneal temperatures and the amounts...
213
Authors: M.A. Falkenberg, D. Abdelbarey, Vitaly V. Kveder, Michael Seibt
Abstract:The efficiency of solar cells produced from crystalline silicon materials is considerably affected by the presence of metal impurities. In...
229
Authors: Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura
Chapter 4: Photovoltaics: From Material to Module
Abstract:We evaluated the properties of crystalline defects in silicon substrate, and clarified the origin of small-angle grain boundaries. In order...
133
Authors: Qiao Yun Ma, Gui Feng Chen, Hui Zhang, Jing Jing Xue, Peng Su, Qiu Yan Hao, Cai Chi Liu
Chapter 1: Academic Frontiers
Abstract:Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with...
115