Paper Title:
New Results on the Bound Exciton Luminescence in Germanium
  Abstract

Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
289-294
DOI
10.4028/www.scientific.net/SSP.178-179.289
Citation
M. Allardt, V. Kolkovsky, S. Kolodinski, N. V. Abrosimov, K. Irmscher, P. Clauws, J. Weber, K. Zuber, "New Results on the Bound Exciton Luminescence in Germanium", Solid State Phenomena, Vols. 178-179, pp. 289-294, 2011
Online since
August 2011
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Price
$32.00
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