Paper Title:
Intrinsic Point Defects in Silicon Crystal Growth
  Abstract

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Plenary
Edited by
W. Jantsch and F. Schäffler
Pages
3-14
DOI
10.4028/www.scientific.net/SSP.178-179.3
Citation
V. V. Voronkov, R. Falster, "Intrinsic Point Defects in Silicon Crystal Growth", Solid State Phenomena, Vols. 178-179, pp. 3-14, 2011
Online since
August 2011
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$32.00
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