Paper Title:
Electron Mobility in Moderately Doped Si1-xGex
  Abstract

Si1-xGex alloys with small atomic fraction of Ge, x≤ 0.05 are investigated. The Hall mobility of electrons in n-type materials was measured at cryogenic temperatures, T≤ 100 K. Taking into account the partial mobility due to charge carrier scattering by ionized centers and phonons it is possible to estimate the partial mobility associated with alloy scattering. It appears that this contribution to the electron mobility in n-Si1-xGex at low temperatures is important even at x≈0.01. The obtained results can be useful for understanding the nature of SiGe alloys and their transport properties.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 1: Silicon-Based and Advanced Semiconductor Materials
Edited by
W. Jantsch and F. Schäffler
Pages
31-34
DOI
10.4028/www.scientific.net/SSP.178-179.31
Citation
V. V. Emtsev, G. A. Oganesyan, N. V. Abrosimov, B. A. Andreev, "Electron Mobility in Moderately Doped Si1-xGex", Solid State Phenomena, Vols. 178-179, pp. 31-34, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Katarzyna Bałdys, Grzegorz Dercz, Łukasz Madej
Abstract:The ferromagnetic shape memory alloys (FSMA) are relatively the brand new smart materials group. The most interesting issue connected with...
171
Authors: Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant K. Agarwal, Scott Allen, John W. Palmour
Chapter IV: SiC Devices and Circuits
Abstract:Alkali (Rb, Cs) and alkaline earth elements (Sr, Ba) provide SiO2/SiC interface conditions suitable for obtaining high...
749
Authors: Kensaku Yamamoto, Sauvik Chowdhury, T. Paul Chow
Chapter IV: SiC Devices and Circuits
Abstract:NO annealed Lateral (11-20) MOSFETs were fabricated and mobility limiting mechanisms were investigated by MOS-gated Hall measurements,...
713