Paper Title:
Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
  Abstract

The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons have been investigated in the course of isochronal annealing. Thermally stable point radiation defects which begin to anneal at ~ 300 C° – 340 C° have been revealed; they manifest themselves as deep donors. It is argued that these defects involve, at least, more than one vacancy and the impurity atom (s) of phosphorus.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
313-318
DOI
10.4028/www.scientific.net/SSP.178-179.313
Citation
N. Y. Arutyunov, M. Elsayed, R. Krause-Rehberg, V. V. Emtsev, G. A. Oganesyan, V. V. Kozlovski, "Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 313-318, 2011
Online since
August 2011
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Price
$32.00
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