Paper Title:
Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
  Abstract

The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
319-324
DOI
10.4028/www.scientific.net/SSP.178-179.319
Citation
A. J. Schriefl, S. Sgouridis, W. Schustereder, W. Puff, "Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon", Solid State Phenomena, Vols. 178-179, pp. 319-324, 2011
Online since
August 2011
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Price
$32.00
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