We report on study of oxygen precipitates grown in Czochralski silicon wafers investigated by x-ray diffraction in Bragg reflection geometry and Laue transmission geometry. The analysis of diffraction curves in Laue geometry was done using Takagi equations and statistical dynamical theory of diffraction. These techniques allow us to determine as the radius of defect area as the defect concentrations from measurement in Laue geometry. These results obtained on silicon wafers exposed to two-step and three-step treatments were compared with other experimental techniques including transmission electron microscopy and infrared absorption spectroscopy, while only the largest precipitates are detected by other techniques. The results of all methods are in good agreement.