Paper Title:
Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
  Abstract

Luminescent and structural properties of silicon layers with dislocation-related luminescence have been studied. Silicon ions (100 keV) were implanted into n-FZ-Si wafers at a dose exceeding the amorphization threshold by two orders of magnitude. The implantation was not followed by amorphization of the implanted layers. A post-implantation annealing resulted in the formation of luminescence centers and extended structural defects. Some fundamental aspects and specific features in the properties of dislocation-related luminescence lines and extended structural defects were revealed in relation to the annealing conditions.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
341-346
DOI
10.4028/www.scientific.net/SSP.178-179.341
Citation
N.A. Sobolev, A. E. Kalyadin, E. I. Shek, V.I. Vdovin, D. I. Tetel`baum, L. I. Khirunenko, "Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions", Solid State Phenomena, Vols. 178-179, pp. 341-346, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Kuriyama, K. Matsumoto, M. Ooi, K. Kushida
Abstract:Multiple-energy nitrogen ions (energies:1 to 100 keV and a net concentration:2.24 x 1020 cm-3) are implanted into ZnO bulk single crystals...
1361
Authors: Atthawut Chanthaphan, Yuta Fukushima, Kenji Yamamoto, Masatoshi Aketa, Hirokazu Asahara, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
2.3 Surfaces and Interfaces
Abstract:The radiative defect centers in thermally-grown SiO2/4H-SiC structures with high-temperature post-oxidation annealing (POA) in...
445