Paper Title:
Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
  Abstract

Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi’s, at 9x1017cm-3 level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for Oi’s precipitation, some samples were pre-annealed for 10 h at 1000 K under 105 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 1: Silicon-Based and Advanced Semiconductor Materials
Edited by
W. Jantsch and F. Schäffler
Pages
35-40
DOI
10.4028/www.scientific.net/SSP.178-179.35
Citation
A. Misiuk, J. Bak-Misiuk, B. Surma, W. Wierzchowski, K. Wieteska, C. A. Londos, N. V. Abrosimov, J. Kucytowski, "Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 35-40, 2011
Online since
August 2011
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Price
$32.00
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