Paper Title:
Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
| Periodical | Solid State Phenomena (Volumes 178 - 179) |
|---|---|
| Main Theme | Gettering and Defect Engineering in Semiconductor Technology XIV |
| Edited by | W. Jantsch and F. Schäffler |
| Pages | 35-40 |
| DOI | 10.4028/www.scientific.net/SSP.178-179.35 |
| Citation | Andrzej Misiuk et al., 2011, Solid State Phenomena, 178-179, 35 |
| Online since | August, 2011 |
| Authors | Andrzej Misiuk, Jadwiga Bak-Misiuk, Barbara Surma, Wojciech Wierzchowski, Krzysztof Wieteska, Charalampos A. Londos, Nikolai V. Abrosimov, Jacek Kucytowski |
| Keywords | Annealing, Homogeneity, Hydrostatic Pressure, Si-Ge, Structural Properties |
| Price | US$ 28,- |
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Abstract
Creation and transformation of defects in single crystalline (001) oriented Si-Ge with about 5.6 at. % Ge content, containing oxygen interstitials, Oi’s, at 9x1017cm-3 level, were investigated, after processing for 5 h at up to 1400 K (HT) under Ar pressure to 1.1 GPa (HP), by X-ray, synchrotron, infrared and photoluminescence methods. To create nucleation centres for Oi’s precipitation, some samples were pre-annealed for 10 h at 1000 K under 105 Pa. HT-HP treatment at 1230/1400 K results in improved sample homogeneity and crystallographic perfection. HT-HP induced changes in Si-Ge are related mainly to HP-stimulated diffusivity of Ge.
