Paper Title:
In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
  Abstract

The measurement of Pendellösungs oscillations was used to observe the time dependent nucleation of oxygen in a Czochralski grown single crystal at 750°C. It is shown, that the theoretical approach of the statistical dynamical theory describes the data well. Within the framework of this theory it is possible to determine the static Debye-Waller-factor as a function of the annealing time by evaluating the mean value of the Bragg intensity and the period length. The temperature influence on the Pendellösungs distance was corrected for by measurement of a Float-zone sample at the same temperature.

  Info
Periodical
Solid State Phenomena (Volumes 178 - 179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
353-359
DOI
10.4028/www.scientific.net/SSP.178-179.353
Citation
Johannes Will et al., 2011, Solid State Phenomena, 178-179, 353
Online since
August 2011
Price
US$ 28,-
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