Paper Title:
Structural Defect Studies of Semiconductor Crystals with Laue Topography
  Abstract

A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
360-365
DOI
10.4028/www.scientific.net/SSP.178-179.360
Citation
A. Gröschel, J. Will, C. Bergmann, H. Grillenberger, S. Eichler, M. Scheffer Czygan, A. Magerl, "Structural Defect Studies of Semiconductor Crystals with Laue Topography", Solid State Phenomena, Vols. 178-179, pp. 360-365, 2011
Online since
August 2011
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Price
$32.00
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