Paper Title:
Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS
  Abstract

Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N and grown on standard n+4H-SiC substrates were exposed to aluminium ion implantation process under the Schottky contact and of junction termination extension (JTE). The studies performed within 80-400 K temperature range revealed five deep electron traps, with a dominant double peak at around room temperature related to the Z1/Z2 defect. The thorough analysis of the DLTS-line shape and DLTS-line behaviour on DLTS measurement conditions made possible to distinguish and identify all the observed deep levels.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 8: Defect and Impurity Characterization
Edited by
W. Jantsch and F. Schäffler
Pages
366-371
DOI
10.4028/www.scientific.net/SSP.178-179.366
Citation
Ł. Gelczuk, M. Dabrowska-Szata, M. Sochacki, J. Szmidt, "Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS", Solid State Phenomena, Vols. 178-179, pp. 366-371, 2011
Online since
August 2011
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Price
$32.00
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