Paper Title:
Tailoring the Electrical Properties of Undoped GaP
  Abstract

The charge compensation in undoped GaP single crystals is investigated by modeling the Fermi level position for various concentrations of shallow and deep donors and acceptors. The model is based on the numerical solution of the charge neutrality equation and allows for calculating the Fermi energy in the temperature range of 1 –1000 K. The experimental studies of the electronic properties and concentrations of grown-in defect centers are performed by the high-resolution photoinduced transient spectroscopy (HRPITS). We show that at the shallow acceptor concentration below 1x1015 cm-3 and the concentration of deep-level defects ~3x1015 cm-3 obtaining undoped GaP with the semi-insulating (SI) properties is possible by substantial reducing the residual concentration of shallow donor impurities.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 9: Gettering, Passivation and Defect Engineering
Edited by
W. Jantsch and F. Schäffler
Pages
410-415
DOI
10.4028/www.scientific.net/SSP.178-179.410
Citation
P. Kaminski, R. Kozlowski, S. Strzelecka, A. Hruban, E. Jurkiewicz-Wegner, M. Piersa, M. Pawlowski, M. Suproniuk, "Tailoring the Electrical Properties of Undoped GaP", Solid State Phenomena, Vols. 178-179, pp. 410-415, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén
33
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Vadim V. Emtsev, Gagik A. Oganesyan, Nikolay V. Abrosimov, V.V. Kozlovski
IX. Germanium-based devices and materials
Abstract:The damaging factor of 15 MeV proton irradiation of n-Ge is investigated. The protons during irradiation went through thin samples and in...
422
Authors: Hideharu Matsuura, Tatsuya Morine, Shinji Nagamachi
Chapter 4: Processing of SiC
Abstract:Because Al and B (elements of III group) in SiC are deep-level acceptors and these acceptors cannot reduce the resistivity of p-type SiC very...
685