Paper Title:
Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure
  Abstract

Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 9: Gettering, Passivation and Defect Engineering
Edited by
W. Jantsch and F. Schäffler
Pages
416-420
DOI
10.4028/www.scientific.net/SSP.178-179.416
Citation
J. Bak-Misiuk, A. Misiuk, A. Barcz, P. Romanowski, "Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure", Solid State Phenomena, Vols. 178-179, pp. 416-420, 2011
Online since
August 2011
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Price
$32.00
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