Paper Title:
Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System
  Abstract

Instead of selective emitter technology we investigate an alternative way to optimize contact formation and increased blue responsivity of highly resistive emitter solar cells using screen print technology for the deposition of the frontside metallization grid. We show with the aid of an inline doping/diffusion set-up at Blue Chip Energy that tuning the emitter doping profile is an alternative way to reduce the effect of Auger recombination in the spectral range from 300 nm to 600 nm. By properly choosing the process conditions we were able to minimize the detrimental effect of the low surface concentration of the dopant on the contact resistance. Due to improved blue light responsivity a significant gain in short circuit current Jsc was achieved. This and a reduced reverse saturation current I00E yielded a higher open circuit voltage VOC and an increase of cell efficiency from 17.6 %-avg to more than 17.9 %-avg.

  Info
Periodical
Solid State Phenomena (Volumes 178-179)
Chapter
Chapter 10: Advanced Solar Cells
Edited by
W. Jantsch and F. Schäffler
Pages
441-445
DOI
10.4028/www.scientific.net/SSP.178-179.441
Citation
W. Wille, R. Rothemund, G. Meinhardt, W. Jantsch, "Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System", Solid State Phenomena, Vols. 178-179, pp. 441-445, 2011
Online since
August 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Anant K. Agarwal, Sei Hyung Ryu, Craig Capell, Jim Richmond, John W. Palmour, Howard Bartlow, T. Paul Chow, Skip Scozzie, W. Tipton, Stephen Baynes, Kenneth A. Jones
1141
Authors: Sang Wook Park, Eun Chel Cho, Jae Hee Yu, Dea Won Kim
Abstract:In this work, we report on the last investigation of POP (selective Phosphorous doping and contact Opening Process) in crystalline silicon...
923
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling
Abstract:4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V...
767
Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga
Abstract:In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut...
889
Authors: Martin Domeij, Anders Lindgren, Carina Zaring, Andrei O. Konstantinov, Krister Gumaelius, Hakan Grenell, Imre Keri, Jan Olov Svedberg, Mats Reimark
Abstract:Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A...
686